Training Topics:
Study of characteristics of thyristors (SCR), field-effect transistors with control PN junction (J-FET), MOS-FETs with isolated gate (MOS-FET) by experimental method.
Component list:
Scheme 1: J-FET characteristics
– 1 x C1, capacitor 104 (0.1μF)
– 1 x C2, 25V/10µF electrolytic capacitor
– 1 x C3, 25V/10µF electrolytic capacitor
– 1 x C4, capacitor 104 (0.1µF)
– 1 x Q1, J-FET field-effect transistor
– 1 x R1, VR potentiometer
– 1 x R2, resistance 0.25 W, 1 kOhm
– 1 x R3, resistance 0.25 W, 1 kOhm
– 1 x R4, resistance 0.25 W, 100 Ohm
– 1 x R5, VR potentiometer
– 1 x U1, chip (DIP)
Scheme 2: MOS-FET characteristics
– 1 x Q1, MOS-FET transistor
– 1 x R1, VR potentiometer
– 1 x R2, resistance 0.25 W, 4.7 kOhm
– 1 x R3, resistance 0.25 W, 10 kOhm
– 1 x R4, resistance 0.25 W, 1 kOhm
– 1 x R5, VR potentiometer
Scheme 3: SCR characteristics
– 1 x L1, lamp (pin contact) DC12V
– 1 x Q1, SCR thyristor
– 1 x R1, resistance 2 W, 510 Ohm
– 1 x R2, resistance 0.25 W, 200 Ohm
– 1 x R3, VR potentiometer
– 1 x R4, resistance 0.25 W, 1 kOhm
– 1 x S1, toggle switch SW
Scheme 4: TRIAC characteristics
– 1 x L1, lamp (pin contact) DC12V
– 1 x Q1, TRIAC triac
– 1 x R1, resistance 2 W, 510 Ohm
– 1 x R3, VR potentiometer
– 1 x R4, resistance 0.25 W, 1 kOhm
– 1 x S1, toggle switch SW
General Features:
– 1 PCB, 280x216x1.6T
– 58 x 2 mm connector
