Training Topics:
– Characteristics of the bias amplifier.
– Study of parallel amplifier (PA) characteristics by experimental method.
– The study of the characteristics of the common emitter amplifier by experimental method.
– A study of the characteristics of the Darlington amplifier by means of experiments.
Component list:
Schematic 1: Offset amplifier
– 1 x C1, electrolytic capacitor 50V/33µF
– 1 x C2, electrolytic capacitor 50V/47μF
– 1 x Q1, transistor
– 1 x R1, resistance 0.25 W, 1 Mohm
– 1 x R2, VR potentiometer
– 1 x R3, resistance 0.25 W, 4.7 kOhm
– 1 x R4, resistance 0.25 W, 2.2 kOhm
Scheme 2: Parallel amplifier
– 1 x C1, electrolytic capacitor 50V/10μF
– 1 x C2, electrolytic capacitor 50V/33µF
– 1 x C3, electrolytic capacitor 25V/220μF
– 1 x C4, electrolytic capacitor 25V/100µF
– 1 x D1, rectifier diode
– 1 x D2, rectifier diode
– 1 x Q1, transistor
– 1 x Q2, transistor
– 1 x Q3, transistor
– 1 x R1, VR potentiometer
– 1 x R2, resistance 0.25 W, 4.7 kOhm
– 1 x R3, impedance 0.25 W, 330 Ohm
– 1 x R4, resistance 0.25 W, 330 Ohm
– 1 x R5, impedance 0.25 W, 4.7 Ohm
– 1 x R6, impedance 0.25 W, 50 Ohm
– 1 x R7, resistance 0.25 W, 40 kOhm
Scheme 3: Common Emitter Amplifier
– 1 x C1, electrolytic capacitor 50V/33µF
– 1 x C2, electrolytic capacitor 50V/33µF
– 1 x C3, electrolytic capacitor 25V/100µF
– 1 x Q1, transistor 2SC3198
– 1 x R1, VR potentiometer
– 1 x R2, resistance 0.25 W, 56 kOhm
– 1 x R3, resistance 0.25 W, 10 kOhm
– 1 x R4, resistance 0.25 W, 4.7 kOhm
– 1 x R5, resistance 0.25 W, 1 kOhm
– 1 x R6, VR potentiometer
Scheme 4: Darlington Amplifier Amplifier
– 1 x C1, multilayer capacitor 0.01µF / 10n
– 1 x C2, ceramic capacitor 101 (100pF)
– 1 x D1, rectifier diode
– 1 x Q1, transistor
– 1 x Q2, transistor
– 1 x R1, VR potentiometer
– 1 x R2, impedance 0.25 W, 50 Ohm
– 1 x R3, resistance 0.25 W, 2.2 kOhm
– 1 x R4, resistance 0.25 W, 330 Ohm
– 1 x R5, resistance 0.25 W, 1 kOhm
General Features:
– 1 PCB, 280x216x1.6T
– Connector 68 x 2 mm
